Retrofitting Wide Band Gap Devices to classic Power Modules using Silicon RC Snubbers

Conference contribution
(Conference Contribution)


Publication Details

Author(s): Matlok S, Boettcher N, Jahn M, Hörauf P, Erlbacher T, Eckardt B
Publication year: 2019
Language: English


Abstract

Parasitic
inductance causes voltage overshoot and oscillations in classic hard-switched commutation
cells and power modules. Newly introduced silicon-based resistive capacitors
(SiRC) can short the switching cell inside the power module itself and thereby
unlink external parasitic inductance. Classic and mechanically robust power
modules are now capable of switching large currents with unlimited turn-on and
turn-off speed. This approach minimizes voltage spikes and remaining
oscillations without use of expensive integrated or external attached pulse
capacitors. Additionally, cutting down switching losses saves chip area, energy
and gains power rating of these SiRC-based power modules.


FAU Authors / FAU Editors

Erlbacher, Tobias PD Dr.
Lehrstuhl für Elektronische Bauelemente
Hörauf, Philipp
Lehrstuhl für Leistungselektronik


External institutions with authors

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)


How to cite

APA:
Matlok, S., Boettcher, N., Jahn, M., Hörauf, P., Erlbacher, T., & Eckardt, B. (2019). Retrofitting Wide Band Gap Devices to classic Power Modules using Silicon RC Snubbers. In Proceedings of the 2019 PCIM Europe. Nürnberg, DE.

MLA:
Matlok, Stefan, et al. "Retrofitting Wide Band Gap Devices to classic Power Modules using Silicon RC Snubbers." Proceedings of the 2019 PCIM Europe, Nürnberg 2019.

BibTeX: 

Last updated on 2019-05-08 at 10:35