A 20.7% PAE 3-Stage 60 GHz Power Amplifier for Radar Applications in 28 nm Bulk CMOS

Conference contribution
(Conference Contribution)


Publication Details

Author(s): Ciocoveanu R, Weigel R, Hagelauer A, Issakov V
Publication year: 2019
Language: English


Abstract

This paper presents a highly efficient 3-stage differential Class-B power amplifier (PA) for short range radar applications, realized in a 28nm bulk CMOS technology. Measurement results show a saturated output power (Psat) of 11.9dBm with a 20.7% power-added efficiency (PAE) at 60 GHz. Moreover, the measurements show that for a frequency range from 57 GHz to 64 GHz, the Psat varies from 10.5dBm to 11.2dBm and the circuit draws 26mA from a 0.9V power supply. Furthermore, the fabricated chip has an area of 0.61mm x 0.31mm including the pads.


FAU Authors / FAU Editors

Ciocoveanu, Radu
Lehrstuhl für Technische Elektronik
Hagelauer, Amelie Dr.-Ing.
Lehrstuhl für Technische Elektronik
Weigel, Robert Prof. Dr.-Ing.
Lehrstuhl für Technische Elektronik


External institutions with authors

Infineon Technologies AG


How to cite

APA:
Ciocoveanu, R., Weigel, R., Hagelauer, A., & Issakov, V. (2019). A 20.7% PAE 3-Stage 60 GHz Power Amplifier for Radar Applications in 28 nm Bulk CMOS. In Proceedings of the European Microwave Week. Paris, FR.

MLA:
Ciocoveanu, Radu, et al. "A 20.7% PAE 3-Stage 60 GHz Power Amplifier for Radar Applications in 28 nm Bulk CMOS." Proceedings of the European Microwave Week, Paris 2019.

BibTeX: 

Last updated on 2019-18-06 at 17:08