Highly-Integrated <0.14 mm2D-Band Receiver Front-Ends for Radar and Imaging Applications in a 130 nm SiGe BiCMOS Technology

Aguilar E, Issakov V, Weigel R (2019)


Publication Language: English

Publication Type: Conference contribution, Conference Contribution

Publication year: 2019

Publisher: Institute of Electrical and Electronics Engineers Inc.

Conference Proceedings Title: 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019

Event location: Orlando, FL US

ISBN: 9781538659502

DOI: 10.1109/SIRF.2019.8709129

Abstract

Two low-power D-band receiver front-ends with competitive performance for radar and imaging applications are presented. The receivers include passive and active singleended-to-differential converters realized as an ultra-compact Marchand-based balun and as a differential-pair-based active balun, respectively. The receivers achieve measured conversion gains (CG) of 24.9dB at 134GHz (active balun) and 20.27dB at 124GHz (passive balun) while consuming 425mW and 330mW correspondingly. A wide bandwidth of 32GHz is achieved for the active variant in the 114-146GHz frequency range while the passive approach achieves a CG > 10dB in the 112-147GHz frequency range. The passive approach achieves a peak conversion gain of 20.27dB at 126GHz. The presented results offer competitive performance and compare favorably to reported receiver front-ends in terms of ultra-small silicon area (0.14 and 0.1mm 2 ). The front-ends are suitable for integration in highly-integrated D-Band radar receiver arrays as well as for high-density imaging arrays.

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APA:

Aguilar, E., Issakov, V., & Weigel, R. (2019). Highly-Integrated <0.14 mm2D-Band Receiver Front-Ends for Radar and Imaging Applications in a 130 nm SiGe BiCMOS Technology. In 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019. Orlando, FL, US: Institute of Electrical and Electronics Engineers Inc..

MLA:

Aguilar, Erick, Vadim Issakov, and Robert Weigel. "Highly-Integrated <0.14 mm2D-Band Receiver Front-Ends for Radar and Imaging Applications in a 130 nm SiGe BiCMOS Technology." Proceedings of the 19th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019, Orlando, FL Institute of Electrical and Electronics Engineers Inc., 2019.

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