Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC

Journal article
(Letter)


Publication Details

Author(s): Weiße J, Hauck M, Krieger M, Bauer A, Erlbacher T
Journal: AIP Advances
Publication year: 2019
Volume: 9
Journal issue: 5
Pages range: 055308
ISSN: 2158-3226
Language: English


Abstract

In 4H silicon carbide, aluminum implantation causes unusual high
compensation ratios as obtained from Hall effect investigations by
fitting the neutrality equation with a single acceptor. We show that
this approach cannot fully describe the experimental data, in particular
in case of moderate doping and at high measurement temperatures above
450 K. We develop two extended models by adding an additional acceptor-
or donor-like defect to the equation. Both approaches describe the data
well. However, it turns out that an additional aluminum-correlated
acceptor is the more reasonable choice. In this case, the compensation
ratio stays almost independent of the implantation dose between 30 % and
40 %. The deep acceptor is located at EV + (280...400) meV.


FAU Authors / FAU Editors

Hauck, Martin
Lehrstuhl für Angewandte Physik
Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik
Weiße, Julietta
Lehrstuhl für Elektronische Bauelemente


External institutions with authors

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)


How to cite

APA:
Weiße, J., Hauck, M., Krieger, M., Bauer, A., & Erlbacher, T. (2019). Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC. AIP Advances, 9(5), 055308. https://dx.doi.org/10.1063/1.5096440

MLA:
Weiße, Julietta, et al. "Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC." AIP Advances 9.5 (2019): 055308.

BibTeX: 

Last updated on 2019-13-05 at 17:38