A Signal Source Chip at 140 GHz and 160 GHz for Radar Applications in a SiGe Bipolar Technology

Unpublished / Preprint


Publication Details

Author(s): Völkel M, Thouabtia M, Breun S, Aufinger K, Weigel R, Hagelauer A
Publication year: 2019
Language: English


Abstract

In this paper, a monolithic signal source chip at
140 GHz and 160 GHz including two VCOs, a dynamic divider
and a static divider chain is presented. Two signal sources with
these high fundamental frequencies are realized. All components
have been designed using a 0.13μm 250 GHz fT SiGe BiCMOS
technology. The whole integrated circuit has a size of 930μm
x 600μm including bondpads and consumes 210mA from a
3.3V and 130mA from a 1.8V supply. The oscillators cover
a frequency range from 119.3–147.7 GHz and 154.2–164 GHz,
which results in a tuning range of 28.4 GHz and 9.8 GHz. A
output power of -0.9/3.6dBm with a best case phase noise of
-111.2/-108 dBc/Hz at 1MHz offset, measured at the divider
output for PLL stabilization is achieved.


FAU Authors / FAU Editors

Breun, Sascha
Lehrstuhl für Technische Elektronik
Hagelauer, Amelie Dr.-Ing.
Lehrstuhl für Technische Elektronik
Thouabtia, Mohamed
Lehrstuhl für Technische Elektronik
Völkel, Matthias
Lehrstuhl für Technische Elektronik
Weigel, Robert Prof. Dr.-Ing.
Lehrstuhl für Technische Elektronik


External institutions
Infineon Technologies AG

Last updated on 2019-12-05 at 00:08