Momentum-dependent relaxation dynamics of the doped repulsive Hubbard model

Sayyad S, Tsuji N, Vaezi A, Capone M, Eckstein M, Aoki H (2019)


Publication Type: Journal article

Publication year: 2019

Journal

Book Volume: 99

Journal Issue: 16

DOI: 10.1103/PhysRevB.99.165132

Abstract

We study the dynamical behavior of doped electronic systems subject to a global ramp of the repulsive Hubbard interaction. We start with formulating a real-time generalization of the fluctuation-exchange approximation. Implementing this numerically, we investigate the weak-coupling regime of the Hubbard model both in the electron-doped and hole-doped regimes. The results show that both local and nonlocal (momentum-dependent) observables evolve toward a thermal state, although the temperature of the final state depends on the ramp duration and the band filling. We further reveal a momentum-dependent relaxation rate of the distribution function in doped systems and trace back its physical origin to the anisotropic self-energies in the momentum space.

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APA:

Sayyad, S., Tsuji, N., Vaezi, A., Capone, M., Eckstein, M., & Aoki, H. (2019). Momentum-dependent relaxation dynamics of the doped repulsive Hubbard model. Physical Review B, 99(16). https://dx.doi.org/10.1103/PhysRevB.99.165132

MLA:

Sayyad, Sharareh, et al. "Momentum-dependent relaxation dynamics of the doped repulsive Hubbard model." Physical Review B 99.16 (2019).

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