A Digital Adjustable Fully Integrated Bistatic Interferometric Radar Transceiver at 60 GHz in a 130 nm BiCMOS Technology

Völkel M, Dietz M, Hagelauer AM, Hussein EM, Kissinger D, Weigel R (2019)


Publication Language: English

Publication Status: Accepted

Publication Type: Conference contribution, Conference Contribution

Future Publication Type: Conference contribution

Publication year: 2019

Event location: Paris FR

DOI: 10.23919/eumic.2019.8909608

Abstract

In this paper a 60 GHz monolithic bistatic interferometric
radar transceiver for high precision measuring is
presented. The integrated transceiver has been designed using
a 0.13μm SiGe BiCMOS process from IHP (SG13G2) and
includes a LNA, a passive six-port structure, detectors, multiplier,
multiplexer, power amplifier and a digital interface. The chip has
a size of 2330μm x 1360μm and a maximum power consumption
of 533mW from a 3.3V power supply. The circuit provides two
frequency inputs of 7.5 and 15GHz and multiplies them up to
60 GHz at a minimum input power of -20 dBm. The chip delivers
a maximum output power of 9dBm at 61 GHz. The input path
is selectable and the output power is adjustable by a digital
interface between -23 and 9dBm at 60 GHz. Also the reference
input power of the six-port and the RF input power can be
adjusted in a range of 13.2 dB. The minimum input referred
P1dB is -24.1 dBm. With a multiplexer, the receiver reference can
be separated from the transmitter, which allows the use of both
independently from each other. The serial interface is realized
in 0.13μm CMOS logic and consists of a 20 bit shift register,
decoder and an analog interface.

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How to cite

APA:

Völkel, M., Dietz, M., Hagelauer, A.M., Hussein, E.M., Kissinger, D., & Weigel, R. (2019). A Digital Adjustable Fully Integrated Bistatic Interferometric Radar Transceiver at 60 GHz in a 130 nm BiCMOS Technology. In Proceedings of the EUMW. Paris, FR.

MLA:

Völkel, Matthias, et al. "A Digital Adjustable Fully Integrated Bistatic Interferometric Radar Transceiver at 60 GHz in a 130 nm BiCMOS Technology." Proceedings of the EUMW, Paris 2019.

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