Maultzsch J (2002)
Publication Status: Published
Publication Type: Journal article
Publication year: 2002
Publisher: AMER INST PHYSICS
Book Volume: 81
Pages Range: 2647-2649
Journal Issue: 14
DOI: 10.1063/1.1512330
We present first- and second-order Raman spectra of boron-doped multiwalled carbon nanotubes. The Raman intensities are analyzed as a function of the nominal boron concentration. The intensities of both the D mode and the high-energy mode in the first-order spectra increase with increasing boron concentration, if normalized with respect to a second-order mode. We interpret this result as an indication that the high-energy mode in carbon nanotubes is defect-induced in a similar way as the D mode. Based on this result, we provide a preliminary quantitative relation between the boron concentration and the Raman intensity ratios. (C) 2002 American Institute of Physics.
APA:
Maultzsch, J. (2002). Raman characterization of boron-doped multiwalled carbon nanotubes. Applied Physics Letters, 81(14), 2647-2649. https://doi.org/10.1063/1.1512330
MLA:
Maultzsch, Janina. "Raman characterization of boron-doped multiwalled carbon nanotubes." Applied Physics Letters 81.14 (2002): 2647-2649.
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