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Measurement of shallow arsenic impurity profiles in semiconductor silicon using time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence spectrometry

Schwenke H, Knoth J, Fabry L, Pahlke S, Scholz R, Frey L (1997)

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Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 1997

Journal

Publisher: Electrochemical Society Inc.

Book Volume: 144

Pages Range: 3979-3983

Journal Issue: 11

DOI: 10.1149/1.1838122

Authors with CRIS profile

How to cite

APA:

Schwenke, H., Knoth, J., Fabry, L., Pahlke, S., Scholz, R., & Frey, L. (1997). Measurement of shallow arsenic impurity profiles in semiconductor silicon using time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence spectrometry. Journal of The Electrochemical Society, 144(11), 3979-3983. https://dx.doi.org/10.1149/1.1838122

MLA:

Schwenke, H., et al. "Measurement of shallow arsenic impurity profiles in semiconductor silicon using time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence spectrometry." Journal of The Electrochemical Society 144.11 (1997): 3979-3983.

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