Effect of oxygen on the formation of end-of-range disorder in implantation amorphized silicon

Journal article
(Original article)


Publication Details

Author(s): Gyulai J, Frey L, Ryssel H, Khanh N
Journal: Journal of Materials Research
Publication year: 1991
Volume: 6
Journal issue: 8
Pages range: 1695-1700
ISSN: 0884-2914
eISSN: 2044-5326


FAU Authors / FAU Editors

Frey, Lothar Prof. Dr.
Lehrstuhl für Elektronische Bauelemente
Ryssel, Heiner Prof. Dr.
Technische Fakultät


How to cite

APA:
Gyulai, J., Frey, L., Ryssel, H., & Khanh, N. (1991). Effect of oxygen on the formation of end-of-range disorder in implantation amorphized silicon. Journal of Materials Research, 6(8), 1695-1700. https://dx.doi.org/10.1557/JMR.1991.1695

MLA:
Gyulai, Jozsef, et al. "Effect of oxygen on the formation of end-of-range disorder in implantation amorphized silicon." Journal of Materials Research 6.8 (1991): 1695-1700.

BibTeX: 

Last updated on 2019-05-06 at 12:17