Effect of oxygen on the formation of end-of-range disorder in implantation amorphized silicon

Gyulai J, Frey L, Ryssel H, Khanh N (1991)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 1991

Journal

Journal of Materials Research Cambridge University Press

Book Volume: 6

Pages Range: 1695-1700

Journal Issue: 8

DOI: 10.1557/JMR.1991.1695

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente Heiner Ryssel Technische Fakultät

How to cite

APA:

Gyulai, J., Frey, L., Ryssel, H., & Khanh, N. (1991). Effect of oxygen on the formation of end-of-range disorder in implantation amorphized silicon. Journal of Materials Research, 6(8), 1695-1700. https://dx.doi.org/10.1557/JMR.1991.1695

MLA:

Gyulai, Jozsef, et al. "Effect of oxygen on the formation of end-of-range disorder in implantation amorphized silicon." Journal of Materials Research 6.8 (1991): 1695-1700.

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