Extended van Hove Singularity and Superconducting Instability in Doped Graphene

Journal article


Publication Details

Author(s): Mcchesney JL, Bostwick A, Ohta T, Seyller T, Horn K, Gonzalez J, Rotenberg E
Journal: Physical Review Letters
Publication year: 2010
Volume: 104
Journal issue: 13
ISSN: 0031-9007


Abstract

We have investigated the effects of doping on a single layer of graphene using angle-resolved photoemission spectroscopy. We show that many-body interactions severely warp the Fermi surface, leading to an extended van~Hove singularity (EVHS) at the graphene M point. The ground state properties of graphene with such an EVHS are calculated, analyzing the competition between a magnetic instability and the tendency towards superconductivity. We find that the latter plays the dominant role as it is enhanced by the strong modulation of the interaction along the Fermi line, leading to an energy scale for the onset of the pairing instability as large as 1~meV when the Fermi energy is sufficiently close to the EVHS.


FAU Authors / FAU Editors

Seyller, Thomas PD Dr.
Lehrstuhl für Laserphysik


Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials


External institutions with authors

Fritz-Haber-Institut der Max-Planck-Gesellschaft (FHI)
Lawrence Berkeley National Laboratory (LBNL)
Spanish National Research Council / Consejo Superior de Investigaciones Científicas (CSIC)


Research Fields

B Nanoelectronic Materials
Exzellenz-Cluster Engineering of Advanced Materials


How to cite

APA:
Mcchesney, J.L., Bostwick, A., Ohta, T., Seyller, T., Horn, K., Gonzalez, J., & Rotenberg, E. (2010). Extended van Hove Singularity and Superconducting Instability in Doped Graphene. Physical Review Letters, 104(13). https://dx.doi.org/10.1103/PhysRevLett.104.136803

MLA:
Mcchesney, J. L., et al. "Extended van Hove Singularity and Superconducting Instability in Doped Graphene." Physical Review Letters 104.13 (2010).

BibTeX: 

Last updated on 2019-21-03 at 09:08