Friction and Dissipation in Epitaxial Graphene Films

Filleter T, Mcchesney JL, Bostwick A, Rotenberg E, Emtsev KV, Seyller T, Horn K, Bennewitz R (2009)

Publication Type: Journal article

Publication year: 2009

Journal

Physical Review Letters American Physical Society

Book Volume: 102

Journal Issue: 8

DOI: 10.1103/PhysRevLett.102.086102

Abstract

We have studied friction and dissipation in single and bilayer graphene films grown epitaxially on SiC. The friction on SiC is greatly reduced by a single layer of graphene and reduced by another factor of 2 on bilayer graphene. The friction contrast between single and bilayer graphene arises from a dramatic difference in electron-phonon coupling, which we discovered by means of angle-resolved photoemission spectroscopy. Bilayer graphene as a lubricant outperforms even graphite due to reduced adhesion.

Authors with CRIS profile

Thomas Seyller Lehrstuhl für Laserphysik

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials

Involved external institutions

McGill University CA Canada (CA) University of California, Berkeley US United States (USA) (US)

How to cite

APA:

Filleter, T., Mcchesney, J.L., Bostwick, A., Rotenberg, E., Emtsev, K.V., Seyller, T.,... Bennewitz, R. (2009). Friction and Dissipation in Epitaxial Graphene Films. Physical Review Letters, 102(8). https://dx.doi.org/10.1103/PhysRevLett.102.086102

MLA:

Filleter, Tobin, et al. "Friction and Dissipation in Epitaxial Graphene Films." Physical Review Letters 102.8 (2009).

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