Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures

Journal article


Publication Details

Author(s): Sarau G, Heilmann M, Bashouti M, Latzel M, Tessarek C, Christiansen S
Journal: ACS Applied Materials and Interfaces
Publication year: 2017
Volume: 9
Journal issue: 11
Pages range: 10003-10011
ISSN: 1944-8244
eISSN: 1944-8252


Abstract

While doping enables application-specific tailoring of graphene properties, it can also produce high defect densities that degrade the beneficial features. In this work, we report efficient nitrogen doping of $∼$11 atom % without virtually inducing new structural defects in the initial, large-area, low defect, and transferred single-layer graphene. To shed light on this remarkable high-doping--low-disorder relationship, a unique experimental strategy consisting of analyzing the changes in doping, strain, and defect density after each important step during the doping procedure was employed. Complementary micro-Raman mapping, X-ray photoelectron spectroscopy, and optical microscopy revealed that effective cleaning of the graphene surface assists efficient nitrogen incorporation accompanied by mild compressive strain resulting in negligible defect formation in the doped graphene lattice. These original results are achieved by separating the growth of graphene from its doping. Moreover, the high doping level occurred simultaneously with the epitaxial growth of n-GaN micro- and nanorods on top of graphene, leading to the flow of higher currents through the graphene/n-GaN rod interface. Our approach can be extended toward integrating graphene into other technologically relevant hybrid semiconductor heterostructures and obtaining an ohmic contact at their interfaces by adjusting the doping level in graphene.


FAU Authors / FAU Editors

Latzel, Michael
Institut für Optik, Information und Photonik


Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials


External institutions with authors

Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light


Research Fields

C Photonic and Optical Materials
Exzellenz-Cluster Engineering of Advanced Materials


How to cite

APA:
Sarau, G., Heilmann, M., Bashouti, M., Latzel, M., Tessarek, C., & Christiansen, S. (2017). Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures. ACS Applied Materials and Interfaces, 9(11), 10003-10011. https://dx.doi.org/10.1021/acsami.7b00067

MLA:
Sarau, George, et al. "Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures." ACS Applied Materials and Interfaces 9.11 (2017): 10003-10011.

BibTeX: 

Last updated on 2019-15-05 at 10:34