Ambipolar, low-voltage and low-hysteresis PbSe nanowire field-effect transistors by electrolyte gating

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Details zur Publikation

Autor(en): Lokteva I, Thiemann S, Gannott F, Zaumseil J
Zeitschrift: Nanoscale
Jahr der Veröffentlichung: 2013
Band: 5
Heftnummer: 10
Seitenbereich: 4230-4235
ISSN: 2040-3364
eISSN: 2040-3372


Abstract

Semiconductor nanowire field-effect transistors (FETs) are interesting for fundamental studies of charge transport as well as possible applications in electronics. Here, we report low-voltage, low-hysteresis and ambipolar PbSe nanowire FETs using electrolyte-gating with ionic liquids and ion gels. We obtain balanced hole and electron mobilities at gate voltages below 1 V. Due to the large effective capacitance of the ionic liquids and thus high charge carrier densities electrolyte-gated nanowire FETs are much less affected by external doping and traps than nanowire FETs with traditional dielectrics such as SiO2. The observed current--voltage characteristics and on/off ratios indicate almost completely transparent Schottky barriers and efficient ambipolar charge injection into a low band gap one-dimensional semiconductor. Finally, we explore the possibility of applying these ambipolar nanowire FETs in complementary inverters for printed electronics.


FAU-Autoren / FAU-Herausgeber

Gannott, Florentina Dr.-Ing.
Lehrstuhl für Werkstoffwissenschaften (Polymerwerkstoffe)
Lokteva, Irina Dr.
Professur für Nano-Elektronik
Thiemann, Stefan
Lehrstuhl für Werkstoffwissenschaften (Polymerwerkstoffe)
Zaumseil, Jana Prof.
Professur für Nano-Elektronik


Zusätzliche Organisationseinheit(en)
Exzellenz-Cluster Engineering of Advanced Materials


Zitierweisen

APA:
Lokteva, I., Thiemann, S., Gannott, F., & Zaumseil, J. (2013). Ambipolar, low-voltage and low-hysteresis PbSe nanowire field-effect transistors by electrolyte gating. Nanoscale, 5(10), 4230-4235. https://dx.doi.org/10.1039/c3nr33723e

MLA:
Lokteva, Irina, et al. "Ambipolar, low-voltage and low-hysteresis PbSe nanowire field-effect transistors by electrolyte gating." Nanoscale 5.10 (2013): 4230-4235.

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Zuletzt aktualisiert 2019-16-03 um 10:10