Lokteva I, Thiemann S, Gannott F, Zaumseil J (2013)
Publication Type: Journal article
Publication year: 2013
Book Volume: 5
Pages Range: 4230-4235
Journal Issue: 10
DOI: 10.1039/c3nr33723e
Semiconductor nanowire field-effect transistors (FETs) are interesting for fundamental studies of charge transport as well as possible applications in electronics. Here, we report low-voltage, low-hysteresis and ambipolar PbSe nanowire FETs using electrolyte-gating with ionic liquids and ion gels. We obtain balanced hole and electron mobilities at gate voltages below 1 V. Due to the large effective capacitance of the ionic liquids and thus high charge carrier densities electrolyte-gated nanowire FETs are much less affected by external doping and traps than nanowire FETs with traditional dielectrics such as SiO2. The observed current--voltage characteristics and on/off ratios indicate almost completely transparent Schottky barriers and efficient ambipolar charge injection into a low band gap one-dimensional semiconductor. Finally, we explore the possibility of applying these ambipolar nanowire FETs in complementary inverters for printed electronics.
APA:
Lokteva, I., Thiemann, S., Gannott, F., & Zaumseil, J. (2013). Ambipolar, low-voltage and low-hysteresis PbSe nanowire field-effect transistors by electrolyte gating. Nanoscale, 5(10), 4230-4235. https://dx.doi.org/10.1039/c3nr33723e
MLA:
Lokteva, Irina, et al. "Ambipolar, low-voltage and low-hysteresis PbSe nanowire field-effect transistors by electrolyte gating." Nanoscale 5.10 (2013): 4230-4235.
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