Stress and doping uniformity of laser crystallized amorphous silicon in thin film silicon solar cells
Agaiby RMB, Becker M, Thapa SB, Urmoneit U, Berger A, Gawlik A, Sarau G, Christiansen SH (2010)
Publication Type: Journal article
Publication year: 2010
Journal
Book Volume: 107
Article Number: 054312
Journal Issue: 5
DOI: 10.1063/1.3319654
Abstract
Simultaneous and locally resolved determination of the mechanical stress variation and the free hole concentration using Raman spectroscopy is demonstrated in laser crystallized amorphous silicon layers. Such layers are often used for the fabrication of thin film solar cells, e.g., on borosilicate glass substrates. The combined effects of stress and doping on the Raman signal can be separated based on the use of three wavelengths in the visible. The results show that the free hole concentration in the samples investigated varies between 1$\times$1018 and 1.3$\times$1019 cm$-$3. Stress as well as the free hole concentration vary substantially within the sample. The stress level varies between 575 and 850 MPa ($±$12 MPa). Cross-sectional transmission electron microscopy images show the presence of extended lattice defects such as dislocations and grain boundaries in the crystallized Si layer which could account for the lateral stress variations detected by Raman spectroscopy. The impact of film inhomogeneity in terms of stress and doping on the performance of a solar cell will be discussed.
Additional Organisation(s)
Involved external institutions
Leibniz-Institut für Photonische Technologien e.V.
Germany (DE)
Max-Planck-Institut für Mikrostrukturphysik (MSP) / Max Planck Institute for Microstructure Physics
Germany (DE)
Bayerisches Laserzentrum gemeinnützige Forschungsgesellschaft mbH (BLZ)
Germany (DE)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Germany (DE)
Germany (DE)
Max-Planck-Institut für Mikrostrukturphysik (MSP) / Max Planck Institute for Microstructure Physics
Germany (DE)
Bayerisches Laserzentrum gemeinnützige Forschungsgesellschaft mbH (BLZ)
Germany (DE)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Germany (DE)
How to cite
APA:
Agaiby, R.M.B., Becker, M., Thapa, S.B., Urmoneit, U., Berger, A., Gawlik, A.,... Christiansen, S.H. (2010). Stress and doping uniformity of laser crystallized amorphous silicon in thin film silicon solar cells. Journal of Applied Physics, 107(5). https://dx.doi.org/10.1063/1.3319654
MLA:
Agaiby, R. M. B., et al. "Stress and doping uniformity of laser crystallized amorphous silicon in thin film silicon solar cells." Journal of Applied Physics 107.5 (2010).
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