Stress and doping uniformity of laser crystallized amorphous silicon in thin film silicon solar cells

Journal article


Publication Details

Author(s): Agaiby RMB, Becker M, Thapa SB, Urmoneit U, Berger A, Gawlik A, Sarau G, Christiansen SH
Journal: Journal of Applied Physics
Publication year: 2010
Volume: 107
Journal issue: 5
ISSN: 0021-8979


Abstract

Simultaneous and locally resolved determination of the mechanical stress variation and the free hole concentration using Raman spectroscopy is demonstrated in laser crystallized amorphous silicon layers. Such layers are often used for the fabrication of thin film solar cells, e.g., on borosilicate glass substrates. The combined effects of stress and doping on the Raman signal can be separated based on the use of three wavelengths in the visible. The results show that the free hole concentration in the samples investigated varies between 1$\times$1018 and 1.3$\times$1019 cm$-$3. Stress as well as the free hole concentration vary substantially within the sample. The stress level varies between 575 and 850 MPa ($±$12 MPa). Cross-sectional transmission electron microscopy images show the presence of extended lattice defects such as dislocations and grain boundaries in the crystallized Si layer which could account for the lateral stress variations detected by Raman spectroscopy. The impact of film inhomogeneity in terms of stress and doping on the performance of a solar cell will be discussed.


Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials


External institutions with authors

Bayerisches Laserzentrum gemeinnützige Forschungsgesellschaft mbH (BLZ)
Leibniz-Institut für Photonische Technologien e.V.
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Max-Planck-Institut für Mikrostrukturphysik (MSP) / Max Planck Institute for Microstructure Physics


Research Fields

C Photonic and Optical Materials
Exzellenz-Cluster Engineering of Advanced Materials


How to cite

APA:
Agaiby, R.M.B., Becker, M., Thapa, S.B., Urmoneit, U., Berger, A., Gawlik, A.,... Christiansen, S.H. (2010). Stress and doping uniformity of laser crystallized amorphous silicon in thin film silicon solar cells. Journal of Applied Physics, 107(5). https://dx.doi.org/10.1063/1.3319654

MLA:
Agaiby, R. M. B., et al. "Stress and doping uniformity of laser crystallized amorphous silicon in thin film silicon solar cells." Journal of Applied Physics 107.5 (2010).

BibTeX: 

Last updated on 2019-21-03 at 13:13