Tungsten doping of Ta3N5-nanotubes for band gap narrowing and enhanced photoelectrochemical water splitting efficiency

Grigorescu SG, Bärhausen B, Wang L, Mazare AV, Yoo JE, Hahn R, Schmuki P (2015)

Publication Type: Journal article

Publication year: 2015

Journal

Book Volume: 51

Pages Range: 85-88

DOI: 10.1016/j.elecom.2014.12.019

Abstract

Ordered W-doped Ta2O5 nanotube arrays were grown by self-organizing electrochemical anodization of TaW alloys with different tungsten concentrations and by a suitable high temperature ammonia treatment, fully converted to W:Ta3N5 tubular structures. A main effect found is that W doping can decrease the band gap from 2~eV (bare Ta3N5) down to 1.75~eV. Ta3N5 nanotubes grown on 0.5 at.% W alloy and modified with Co(OH)x as co-catalyst show ~~33% higher photocurrents in photoelectrochemical (PEC) water splitting than pure Ta3N5.

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APA:

Grigorescu, S.G., Bärhausen, B., Wang, L., Mazare, A.V., Yoo, J.E., Hahn, R., & Schmuki, P. (2015). Tungsten doping of Ta3N5-nanotubes for band gap narrowing and enhanced photoelectrochemical water splitting efficiency. Electrochemistry Communications, 51, 85-88. https://dx.doi.org/10.1016/j.elecom.2014.12.019

MLA:

Grigorescu, Sabina Georgiana, et al. "Tungsten doping of Ta3N5-nanotubes for band gap narrowing and enhanced photoelectrochemical water splitting efficiency." Electrochemistry Communications 51 (2015): 85-88.

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