Nanoscale Conducting Oxide PlasMOStor
Lee HW, Papadakis G, Burgos SP, Chander K, Kriesch A, Pala R, Peschel U, Atwater HA (2014)
Publication Type: Journal article
Publication year: 2014
Journal
Pages Range: 6463-6468
Journal Issue: 14
DOI: 10.1021/nl502998z
Abstract
We experimentally demonstrate an ultracompact PlasMOStor, a plasmon slot waveguide field-effect modulator based on a transparent conducting oxide active region. By electrically modulating the conducting oxide material deposited into the gaps of highly confined plasmonic slot waveguides, we demonstrate field-effect dynamics giving rise to modulation with high dynamic range (2.71 dB/\textgreekmm) and low waveguide loss ($∼$0.45 dB/\textgreekmm). The large modulation strength is due to the large change in complex dielectric function when the signal wavelength approaches the surface plasmon resonance in the voltage-tuned conducting oxide accumulation layer. The results provide insight about the design of ultracompact, nanoscale modulators for future integrated nanophotonic circuits.
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United States (USA) (US)How to cite
APA:
Lee, H.W., Papadakis, G., Burgos, S.P., Chander, K., Kriesch, A., Pala, R.,... Atwater, H.A. (2014). Nanoscale Conducting Oxide PlasMOStor. Nano Letters, 14, 6463-6468. https://dx.doi.org/10.1021/nl502998z
MLA:
Lee, Ho W., et al. "Nanoscale Conducting Oxide PlasMOStor." Nano Letters 14 (2014): 6463-6468.
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