Nanoscale Conducting Oxide PlasMOStor

Journal article


Publication Details

Author(s): Lee HW, Papadakis G, Burgos SP, Chander K, Kriesch A, Pala R, Peschel U, Atwater HA
Journal: Nano Letters
Publication year: 2014
Journal issue: 14
Pages range: 6463-6468
ISSN: 1530-6984


Abstract

We experimentally demonstrate an ultracompact PlasMOStor, a plasmon slot waveguide field-effect modulator based on a transparent conducting oxide active region. By electrically modulating the conducting oxide material deposited into the gaps of highly confined plasmonic slot waveguides, we demonstrate field-effect dynamics giving rise to modulation with high dynamic range (2.71 dB/\textgreekmm) and low waveguide loss ($∼$0.45 dB/\textgreekmm). The large modulation strength is due to the large change in complex dielectric function when the signal wavelength approaches the surface plasmon resonance in the voltage-tuned conducting oxide accumulation layer. The results provide insight about the design of ultracompact, nanoscale modulators for future integrated nanophotonic circuits.


FAU Authors / FAU Editors

Peschel, Ulf Prof. Dr.
Professur für Experimentalphysik


Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials


External institutions with authors

California Institute of Technology (Caltech)


Research Fields

C Photonic and Optical Materials
Exzellenz-Cluster Engineering of Advanced Materials


How to cite

APA:
Lee, H.W., Papadakis, G., Burgos, S.P., Chander, K., Kriesch, A., Pala, R.,... Atwater, H.A. (2014). Nanoscale Conducting Oxide PlasMOStor. Nano Letters, 14, 6463-6468. https://dx.doi.org/10.1021/nl502998z

MLA:
Lee, Ho W., et al. "Nanoscale Conducting Oxide PlasMOStor." Nano Letters 14 (2014): 6463-6468.

BibTeX: 

Last updated on 2019-13-03 at 16:08