Nanoscale Conducting Oxide PlasMOStor

Journal article

Publication Details

Author(s): Lee HW, Papadakis G, Burgos SP, Chander K, Kriesch A, Pala R, Peschel U, Atwater HA
Journal: Nano Letters
Publication year: 2014
Journal issue: 14
Pages range: 6463-6468
ISSN: 1530-6984


We experimentally demonstrate an ultracompact PlasMOStor, a plasmon slot waveguide field-effect modulator based on a transparent conducting oxide active region. By electrically modulating the conducting oxide material deposited into the gaps of highly confined plasmonic slot waveguides, we demonstrate field-effect dynamics giving rise to modulation with high dynamic range (2.71 dB/\textgreekmm) and low waveguide loss ($∼$0.45 dB/\textgreekmm). The large modulation strength is due to the large change in complex dielectric function when the signal wavelength approaches the surface plasmon resonance in the voltage-tuned conducting oxide accumulation layer. The results provide insight about the design of ultracompact, nanoscale modulators for future integrated nanophotonic circuits.

FAU Authors / FAU Editors

Peschel, Ulf Prof. Dr.
Professur für Experimentalphysik

Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials

External institutions with authors

California Institute of Technology (Caltech)

Research Fields

C Photonic and Optical Materials
Exzellenz-Cluster Engineering of Advanced Materials

How to cite

Lee, H.W., Papadakis, G., Burgos, S.P., Chander, K., Kriesch, A., Pala, R.,... Atwater, H.A. (2014). Nanoscale Conducting Oxide PlasMOStor. Nano Letters, 14, 6463-6468.

Lee, Ho W., et al. "Nanoscale Conducting Oxide PlasMOStor." Nano Letters 14 (2014): 6463-6468.


Last updated on 2019-13-03 at 16:08