Mapping Charge-Carrier Density across the p-n Junction in Ambipolar Carbon-Nanotube Networks by Raman Microscopy

Journal article


Publication Details

Author(s): Grimm S, Jakubka F, Schießl S, Gannott F, Zaumseil J
Journal: Advanced Materials
Publication year: 2014
ISSN: 0935-9648
eISSN: 1521-4095


Abstract

In situ confocal Raman microscopy is used to map the recombination zone (induced p-n junction) in an ambipolar carbon-nanotube-network transistor with high spatial resolution. The shift of the 2D mode (G' mode) depending on hole and electron accumulation serves as a measure for the local charge-carrier density and provides complementary information about charge transport and recombination in ambipolar transistors.


FAU Authors / FAU Editors

Gannott, Florentina Dr.-Ing.
Lehrstuhl für Werkstoffwissenschaften (Polymerwerkstoffe)
Grimm, Stefan
Lehrstuhl für Werkstoffwissenschaften (Polymerwerkstoffe)
Jakubka, Florian
Professur für Nano-Elektronik
Schießl, Stefan
Professur für Nano-Elektronik
Zaumseil, Jana Prof.
Professur für Nano-Elektronik


Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials


How to cite

APA:
Grimm, S., Jakubka, F., Schießl, S., Gannott, F., & Zaumseil, J. (2014). Mapping Charge-Carrier Density across the p-n Junction in Ambipolar Carbon-Nanotube Networks by Raman Microscopy. Advanced Materials. https://dx.doi.org/10.1002/adma.201403655

MLA:
Grimm, Stefan, et al. "Mapping Charge-Carrier Density across the p-n Junction in Ambipolar Carbon-Nanotube Networks by Raman Microscopy." Advanced Materials (2014).

BibTeX: 

Last updated on 2019-14-03 at 09:23