Mapping Charge-Carrier Density across the p-n Junction in Ambipolar Carbon-Nanotube Networks by Raman Microscopy

Grimm S, Jakubka F, Schießl S, Gannott F, Zaumseil J (2014)


Publication Type: Journal article

Publication year: 2014

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Article Number: n/a

DOI: 10.1002/adma.201403655

Abstract

In situ confocal Raman microscopy is used to map the recombination zone (induced p-n junction) in an ambipolar carbon-nanotube-network transistor with high spatial resolution. The shift of the 2D mode (G' mode) depending on hole and electron accumulation serves as a measure for the local charge-carrier density and provides complementary information about charge transport and recombination in ambipolar transistors.

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APA:

Grimm, S., Jakubka, F., Schießl, S., Gannott, F., & Zaumseil, J. (2014). Mapping Charge-Carrier Density across the p-n Junction in Ambipolar Carbon-Nanotube Networks by Raman Microscopy. Advanced Materials. https://dx.doi.org/10.1002/adma.201403655

MLA:

Grimm, Stefan, et al. "Mapping Charge-Carrier Density across the p-n Junction in Ambipolar Carbon-Nanotube Networks by Raman Microscopy." Advanced Materials (2014).

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