Mapping Charge-Carrier Density across the p-n Junction in Ambipolar Carbon-Nanotube Networks by Raman Microscopy

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Details zur Publikation

Autor(en): Grimm S, Jakubka F, Schießl S, Gannott F, Zaumseil J
Zeitschrift: Advanced Materials
Jahr der Veröffentlichung: 2014
ISSN: 0935-9648
eISSN: 1521-4095


Abstract

In situ confocal Raman microscopy is used to map the recombination zone (induced p-n junction) in an ambipolar carbon-nanotube-network transistor with high spatial resolution. The shift of the 2D mode (G' mode) depending on hole and electron accumulation serves as a measure for the local charge-carrier density and provides complementary information about charge transport and recombination in ambipolar transistors.


FAU-Autoren / FAU-Herausgeber

Gannott, Florentina Dr.-Ing.
Zaumseil, Jana Prof.
Lehrstuhl für Werkstoffwissenschaften (Polymerwerkstoffe)
Professur für Nano-Elektronik
Grimm, Stefan
Lehrstuhl für Werkstoffwissenschaften (Polymerwerkstoffe)
Jakubka, Florian
Professur für Nano-Elektronik
Schießl, Stefan
Professur für Nano-Elektronik


Zusätzliche Organisationseinheit(en)
Exzellenz-Cluster Engineering of Advanced Materials


Zitierweisen

APA:
Grimm, S., Jakubka, F., Schießl, S., Gannott, F., & Zaumseil, J. (2014). Mapping Charge-Carrier Density across the p-n Junction in Ambipolar Carbon-Nanotube Networks by Raman Microscopy. Advanced Materials. https://dx.doi.org/10.1002/adma.201403655

MLA:
Grimm, Stefan, et al. "Mapping Charge-Carrier Density across the p-n Junction in Ambipolar Carbon-Nanotube Networks by Raman Microscopy." Advanced Materials (2014).

BibTeX: 

Zuletzt aktualisiert 2019-14-03 um 09:23