Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation

Beitrag in einer Fachzeitschrift

Details zur Publikation

Autorinnen und Autoren: Kim H, Kim W, O'Brien M, Mcevoy N, Yim C, Marcia M, Hauke F, Hirsch A, Kim GT, Duesberg G
Zeitschrift: Nanoscale
Jahr der Veröffentlichung: 2018
Band: 10
Heftnummer: 37
Seitenbereich: 17557-17566
ISSN: 2040-3364


Field-effect transistors (FETs) with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapour deposition (CVD) on SiO2 are reported. The dangling-bond-free surface of MoS2 was functionalised with a perylene bisimide derivative to allow for the deposition of Al2O3 dielectric. This allowed the fabrication of top-gated, fully encapsulated MoS2 FETs. Furthermore, by the definition of vertical contacts on MoS2, devices, in which the channel area was never exposed to polymers, were fabricated. The MoS2 FETs showed some of the highest mobilities for transistors fabricated on SiO2 with Al2O3 as the top-gate dielectric reported so far. Thus, gate-stack engineering using innovative chemistry is a promising approach for the fabrication of reliable electronic devices based on 2D materials.

FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Hauke, Frank Dr.
Zentralinstitut für Neue Materialien und Prozesstechnik
Hirsch, Andreas Prof. Dr.
Lehrstuhl für Organische Chemie II
Marcia, Mario
Lehrstuhl für Organische Chemie II

Einrichtungen weiterer Autorinnen und Autoren

Trinity College Dublin
Universität der Bundeswehr München


Kim, H., Kim, W., O'Brien, M., Mcevoy, N., Yim, C., Marcia, M.,... Duesberg, G. (2018). Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation. Nanoscale, 10(37), 17557-17566. https://dx.doi.org/10.1039/c8nr02134a

Kim, HyunJeong, et al. "Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation." Nanoscale 10.37 (2018): 17557-17566.


Zuletzt aktualisiert 2019-10-03 um 16:10