Observation of Plasmarons in Quasi-Freestanding Doped Graphene

Beitrag in einer Fachzeitschrift

Details zur Publikation

Autorinnen und Autoren: Bostwick A, Speck F, Seyller T, Horn K, Polini M, Asgari R, Macdonald AH, Rotenberg E
Zeitschrift: Science
Jahr der Veröffentlichung: 2010
Band: 328
Heftnummer: 5981
Seitenbereich: 999-1002
ISSN: 0036-8075
eISSN: 1095-9203


A hallmark of graphene is its unusual conical band structure that leads to a zero-energy band gap at a single Dirac crossing point. By measuring the spectral function of charge carriers in quasi-freestanding graphene with angle-resolved photoemission spectroscopy, we showed that at finite doping, this well-known linear Dirac spectrum does not provide a full description of the charge-carrying excitations. We observed composite ``plasmaron'' particles, which are bound states of charge carriers with plasmons, the density oscillations of the graphene electron gas. The Dirac crossing point is resolved into three crossings: the first between pure charge bands, the second between pure plasmaron bands, and the third a ring-shaped crossing between charge and plasmaron bands.

FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Seyller, Thomas PD Dr.
Lehrstuhl für Laserphysik
Speck, Florian
Lehrstuhl für Laserphysik

Zusätzliche Organisationseinheit(en)
Exzellenz-Cluster Engineering of Advanced Materials

Einrichtungen weiterer Autorinnen und Autoren

Fritz-Haber-Institut der Max-Planck-Gesellschaft (FHI)
Institute for Research in Fundamental Sciences (IPM)
Lawrence Berkeley National Laboratory (LBNL)
Scuola Normale Superiore di Pisa (SNS)
University of Texas at Austin


B Nanoelectronic Materials
Exzellenz-Cluster Engineering of Advanced Materials


Bostwick, A., Speck, F., Seyller, T., Horn, K., Polini, M., Asgari, R.,... Rotenberg, E. (2010). Observation of Plasmarons in Quasi-Freestanding Doped Graphene. Science, 328(5981), 999-1002. https://dx.doi.org/10.1126/science.1186489

Bostwick, Aaron, et al. "Observation of Plasmarons in Quasi-Freestanding Doped Graphene." Science 328.5981 (2010): 999-1002.


Zuletzt aktualisiert 2019-14-03 um 06:08