Detection of effective recombination centers in fluorescent SiC using thermally
stimulated luminescence

Conference contribution


Publication Details

Author(s): Wei Y, Künecke U, Wellmann P, Ou H
Publication year: 2017
Language: English


Abstract

Two n-type 6H fluorescent SiC (f-SiC) samples have been characterized using thermally stimulated luminescence (TSL) spectroscopy, where the dominant carriers recombination regime has been found via the numerical simulations.


FAU Authors / FAU Editors

Künecke, Ulrike Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


External institutions
Technical University of Denmark / Danmarks Tekniske Universitet (DTU)


How to cite

APA:
Wei, Y., Künecke, U., Wellmann, P., & Ou, H. (2017). Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence. In Proceedings of the 5th international workshop on LED and Solar Applications. Lyngby, DK.

MLA:
Wei, Yi, et al. "Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence." Proceedings of the 5th international workshop on LED and Solar Applications, Lyngby 2017.

BibTeX: 

Last updated on 2019-16-04 at 03:23