Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence

Wei Y, Künecke U, Wellmann P, Ou H (2017)

Publication Language: English

Publication Type: Conference contribution

Publication year: 2017

Event location: Lyngby DK

Abstract

Two n-type 6H fluorescent SiC (f-SiC) samples have been characterized using thermally stimulated luminescence (TSL) spectroscopy, where the dominant carriers recombination regime has been found via the numerical simulations.

Authors with CRIS profile

Ulrike Künecke Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

Technical University of Denmark / Danmarks Tekniske Universitet (DTU) DK Denmark (DK)

How to cite

APA:

Wei, Y., Künecke, U., Wellmann, P., & Ou, H. (2017). Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence. In Proceedings of the 5th international workshop on LED and Solar Applications. Lyngby, DK.

MLA:

Wei, Yi, et al. "Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence." Proceedings of the 5th international workshop on LED and Solar Applications, Lyngby 2017.

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