Thermally Stimulated Luminescence in 6H Fluorescent SiC

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Details zur Publikation

Autor(en): Wei Y, Künecke U, Wellmann P, Ou H
Jahr der Veröffentlichung: 2017
Sprache: Englisch


Abstract

Fluorescent silicon carbide (f-SiC) is the emerging material for white light-emitting diodes (LED) thanks to its high conversion efficiency from near-ultraviolet (NUV) to visible light [1-2]. However, the procedures of the donor-acceptor pair (DAP) recombination, which plays the key role for the wavelength conversion of the f-SiC material and determines the internal quantum efficiency (IQE), have not been precisely interpreted yet. The occupancy conditions of the electrons and the holes on the different sites [3] of the donor levels and the acceptor levels respectively vary with different f-SiC samples (e.g., 2 types of cubic sites and 1 type of hexagonal sites of the donor levels for 6H SiC), and the dominance of the DAP recombination process is site-dependent [4], hence the tuning of the dominant occupancies of the electrons and the holes to enhance the DAP procedures is an important issue during the crystal growth and is able to essentially improve the IQE of the 6H f-SiC material.
In this paper, we demonstrate the characterization of the dominant occupancies of the electrons on the donor levels of the two different n-type 6H f-SiC samples by using thermally stimulated luminescence (TSL). TSL has been applied for the experimental characterization, since TSL has no requirement of contact preparation for samples which is quite time-consuming, making the advantage of the TSL method beyond the conventional defect levels characterization methods like deep level transient spectroscopy [5]. We further theoretically studied the measured TSL results based on the monomolecular and bimolecular thermal activation energy model developed by Halperin A. et al. [6] with our own modification according to the special case for the f-SiC material. The modelled TSL curves fitted well with the measured TSL curves regarding to both the line shape and the actual TSL intensities


FAU-Autoren / FAU-Herausgeber

Künecke, Ulrike Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


Autor(en) der externen Einrichtung(en)
Technical University of Denmark / Danmarks Tekniske Universitet (DTU)


Zitierweisen

APA:
Wei, Y., Künecke, U., Wellmann, P., & Ou, H. (2017). Thermally Stimulated Luminescence in 6H Fluorescent SiC. In Proceedings of the International Conference on Silicon Carbide and Related Materials. Washington, DC, US.

MLA:
Wei, Yi, et al. "Thermally Stimulated Luminescence in 6H Fluorescent SiC." Proceedings of the International Conference on Silicon Carbide and Related Materials, Washington, DC 2017.

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Zuletzt aktualisiert 2019-16-04 um 03:23