Normalized differential conductance to study current conduction mechanisms in MOS structures
Nouibat TH, Messai Z, Chikouch D, Ouennoughi Z, Rouag N, Rommel M, Frey L (2018)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2018
Journal
Publisher: Elsevier Ltd
Book Volume: 91
Pages Range: 183-187
DOI: 10.1016/j.microrel.2018.10.001
Authors with CRIS profile
Involved external institutions
Université Ferhat Abbas de Sétif (UFAS) / University Ferhat Abbas of Setif
Algeria (DZ)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
Université de M'Sila - Mohamed Boudiaf / جامعة محمد بوضياف مسيلة
Algeria (DZ)
Université Mohamed El Bachir El Ibrahimi de Bordj Bou Arréridj
Algeria (DZ)
Algeria (DZ)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
Université de M'Sila - Mohamed Boudiaf / جامعة محمد بوضياف مسيلة
Algeria (DZ)
Université Mohamed El Bachir El Ibrahimi de Bordj Bou Arréridj
Algeria (DZ)
How to cite
APA:
Nouibat, T.H., Messai, Z., Chikouch, D., Ouennoughi, Z., Rouag, N., Rommel, M., & Frey, L. (2018). Normalized differential conductance to study current conduction mechanisms in MOS structures. Microelectronics Reliability, 91, 183-187. https://dx.doi.org/10.1016/j.microrel.2018.10.001
MLA:
Nouibat, T. H., et al. "Normalized differential conductance to study current conduction mechanisms in MOS structures." Microelectronics Reliability 91 (2018): 183-187.
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