Detection and Cryogenic Characterization of Defects at the SiO2/4H-SiC Interface in Trench MOSFET

Journal article
(Original article)


Publication Details

Author(s): Berens J, Rasinger F, Aichinger T, Heuken M, Krieger M, Pobegen G
Journal: IEEE Transactions on Electron Devices
Publication year: 2019
Volume: 66
Journal issue: 3
Pages range: 1213-1217
ISSN: 0018-9383
Language: English


Abstract

We employed the thermal dielectric relaxation current (TDRC) method for the detection and cryogenic
characterization of traps at the 4H-SiC/SiO2 interface in n-channel trench MOSFETs and n-MOS trench capacitors. The interface of trench devices on the (11-20)-plane atomically differs from the interface of standard lateral devices [(0001)-plane]. In the MOSFET, two TDRC signal peaks originating from electron traps were found and characterized by parameter variation in TDRC measurements. One peak corresponds to interface states located 0.13 eV below the 4H-SiC conduction band edge EC. The otherone is attributed
to the near-interface traps (NITs) with an electron emission barrier of 0.3 eV. The NIT peak shows an inverse dependence on the discharging voltage compared to regular interface states. In contrast to the MOSFET, only NITs were measured in n-type MOS capacitors. The results found in trench devices were also confirmed for lateral devices. Therefore, we show that the study of SiC MOS capacitors is not sufficient for the understanding of degradation mechanisms in SiC MOSFETs. The interface states at EC-0.13 eV detected
in MOSFETs are assumed to contribute to the degradation of the apparent channel mobility and ON-resistance of SiC MOSFETs. These states are strongly reduced by annealing in NO compared to N2.


FAU Authors / FAU Editors

Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik


External institutions with authors

Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen


Research Fields

Semiconductors: Dopands and Defects (Dr. Krieger, Prof. Weber)
Lehrstuhl für Angewandte Physik


How to cite

APA:
Berens, J., Rasinger, F., Aichinger, T., Heuken, M., Krieger, M., & Pobegen, G. (2019). Detection and Cryogenic Characterization of Defects at the SiO2/4H-SiC Interface in Trench MOSFET. IEEE Transactions on Electron Devices, 66(3), 1213-1217. https://dx.doi.org/10.1109/TED.2019.2891820

MLA:
Berens, Judith, et al. "Detection and Cryogenic Characterization of Defects at the SiO2/4H-SiC Interface in Trench MOSFET." IEEE Transactions on Electron Devices 66.3 (2019): 1213-1217.

BibTeX: 

Last updated on 2019-24-02 at 07:55