Experimental Considerations on Accurate fT and fmax Extraction for MOS Transistors Measured up to 110 GHz

Rimmelspacher J, Werthof A, Weigel R, Geiselbrechtinger A, Issakov V (2019)

Publication Type: Conference contribution, Conference Contribution

Publication year: 2019

Event location: Orlando, FL US

DOI: 10.1109/arftg.2019.8637249

Authors with CRIS profile

Johannes Rimmelspacher Lehrstuhl für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik

Involved external institutions

Infineon Technologies AG DE Germany (DE)

How to cite

APA:

Rimmelspacher, J., Werthof, A., Weigel, R., Geiselbrechtinger, A., & Issakov, V. (2019). Experimental Considerations on Accurate fT and fmax Extraction for MOS Transistors Measured up to 110 GHz. In Proceedings of the Automated RF Techniques Group (ARFTG) Microwave Measurement Symposium. Orlando, FL, US.

MLA:

Rimmelspacher, Johannes, et al. "Experimental Considerations on Accurate fT and fmax Extraction for MOS Transistors Measured up to 110 GHz." Proceedings of the Automated RF Techniques Group (ARFTG) Microwave Measurement Symposium, Orlando, FL 2019.

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