Circuits with Scaled Metal Oxide Technology for Future TOLAE RF Systems

Conference contribution
(Conference Contribution)


Publication Details

Author(s): Schrüfer D, Ellinger M, Jank M, Frey L, Weigel R, Hagelauer A
Publication year: 2018
Conference Proceedings Title: Proceedings of the 48th European Microwave Conference
Pages range: 737-740
ISBN: 978-2-87487-051-4
Language: English


Abstract

A novel architecture for thin-film transistors (TFT) utilising the concept of combining a staggered and a coplanar electrode in a single Alternating Contact TFT (ACTFT) is presented. It exhibits a transit frequency of 49.2MHz for a channel length of 0.6 μm at a drain and gate voltage of 2V. Based on these ACTFTs various n-channel-only digital circuits were fabricated and are presented here.


FAU Authors / FAU Editors

Ellinger, Martin
Lehrstuhl für Elektronische Bauelemente
Frey, Lothar Prof. Dr.
Lehrstuhl für Elektronische Bauelemente
Hagelauer, Amelie Dr.-Ing.
Lehrstuhl für Technische Elektronik
Schrüfer, Daniel
Lehrstuhl für Technische Elektronik
Weigel, Robert Prof. Dr.-Ing.
Lehrstuhl für Technische Elektronik


External institutions with authors

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)


How to cite

APA:
Schrüfer, D., Ellinger, M., Jank, M., Frey, L., Weigel, R., & Hagelauer, A. (2018). Circuits with Scaled Metal Oxide Technology for Future TOLAE RF Systems. In Proceedings of the 48th European Microwave Conference (pp. 737-740). Madrid, ES.

MLA:
Schrüfer, Daniel, et al. "Circuits with Scaled Metal Oxide Technology for Future TOLAE RF Systems." Proceedings of the European Microwave Conference, Madrid 2018. 737-740.

BibTeX: 

Last updated on 2019-22-02 at 11:08