Terahertz generation with ballistic photodiodes under pulsed operation

Journal article
(Original article)


Publication Details

Author(s): Preu S, Müller-Landau C, Malzer S, Weber HB, Döhler G, Winnerl S, Burke P, Gossard A
Journal: Semiconductor Science and Technology
Publisher: Institute of Physics Publishing
Publication year: 2018
Volume: 33
Journal issue: 11
ISSN: 0268-1242


FAU Authors / FAU Editors

Döhler, Gottfried Prof. Dr.
Naturwissenschaftliche Fakultät
Malzer, Stefan Dr.
Institut für Physik der Kondensierten Materie
Müller-Landau, Christian
Lehrstuhl für Angewandte Physik
Preu, Sascha Dr.
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik


External institutions
Helmholtz-Zentrum Dresden-Rossendorf (HZDR)
University of California


How to cite

APA:
Preu, S., Müller-Landau, C., Malzer, S., Weber, H.B., Döhler, G., Winnerl, S.,... Gossard, A. (2018). Terahertz generation with ballistic photodiodes under pulsed operation. Semiconductor Science and Technology, 33(11). https://dx.doi.org/10.1088/1361-6641/aae5e4

MLA:
Preu, Sascha, et al. "Terahertz generation with ballistic photodiodes under pulsed operation." Semiconductor Science and Technology 33.11 (2018).

BibTeX: 

Last updated on 2019-06-01 at 21:10