Back side ablation of SiC diodes using a q-switched NIR laser

Journal article
(Original article)


Publication Details

Author(s): Adelmann B, Hürner A, Roth GL, Hellmann R
Journal: Journal of Laser Micro Nanoengineering
Publisher: Japan Laser Processing Society
Publication year: 2015
Volume: 10
Journal issue: 2
Pages range: 190-194
ISSN: 1880-0688
Language: English


Abstract

We study pulsed fiber laser back side ablation of silicon carbide diodes. With the objective to thin the SiC substrate thickness without damaging the semiconductor device or altering its electrical characteristics, we investigate the ablation characteristics of silicon carbide and determine the ablation
threshold, rate and quality as well as the material composition at the
ablated surface. Based on optimized process parameters, including track
distance, laser repetition rate and scanning velocity, we micro structure the substrate of SiC diodes and compare its electrical characteristic to an unprocessed device. Our results prove that the typical diode characteristic and built-in voltage are not affected by the laser ablation process. Fiber laser back side ablation therefore offers a precise and efficient micro structuring approach for substrate thinning in silicon carbide technology.


FAU Authors / FAU Editors

Adelmann, Benedikt
Technische Fakultät
Hürner, Andreas
Lehrstuhl für Elektronische Bauelemente
Roth, Gian-Luca
Lehrstuhl für Elektronische Bauelemente


External institutions with authors

Hochschule Aschaffenburg


How to cite

APA:
Adelmann, B., Hürner, A., Roth, G.-L., & Hellmann, R. (2015). Back side ablation of SiC diodes using a q-switched NIR laser. Journal of Laser Micro Nanoengineering, 10(2), 190-194. https://dx.doi.org/10.2961/jlmn.2015.02.0016

MLA:
Adelmann, Benedikt, et al. "Back side ablation of SiC diodes using a q-switched NIR laser." Journal of Laser Micro Nanoengineering 10.2 (2015): 190-194.

BibTeX: 

Last updated on 2018-25-11 at 13:53