An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications

Journal article
(Original article)


Publication Details

Author(s): Lin L, Ou Y, Jokubavicius V, Syväjärvi M, Liang M, Liu Z, Yi X, Schuh P, Wellmann P, Herstrøm B, Jensen F, Ou H
Journal: Materials Science in Semiconductor Processing
Publication year: 2019
Volume: 91
Pages range: 9-12
ISSN: 1369-8001
Language: English


Abstract

We report an adhesive bonding approach using hydrogen silsesquioxane (HSQ) for silicon carbide (SiC) samples. A hybrid light-emitting diode (LED) was successfully fabricated through bonding a near-ultraviolet (NUV) LED grown on a commercial 4H-SiC substrate to a free-standing boron-nitrogen co-doped fluorescent-SiC epi-layer. The bonding quality and the electrical performance of the hybrid LED device were characterized. Neither voids nor defects were observed which indicates a good bonding quality of the proposed HSQ approach. A strong warm white emission was successfully obtained from the hybrid LED through an electric current injection of 30 mA.


FAU Authors / FAU Editors

Schuh, Philipp
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


External institutions with authors

Institute of Semiconductors
Linköping University
Technical University of Denmark / Danmarks Tekniske Universitet (DTU)


How to cite

APA:
Lin, L., Ou, Y., Jokubavicius, V., Syväjärvi, M., Liang, M., Liu, Z.,... Ou, H. (2019). An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications. Materials Science in Semiconductor Processing, 91, 9-12. https://dx.doi.org/10.1016/j.mssp.2018.10.028

MLA:
Lin, Li, et al. "An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications." Materials Science in Semiconductor Processing 91 (2019): 9-12.

BibTeX: 

Last updated on 2018-07-12 at 13:53