Review of SiC crystal growth technology

Beitrag in einer Fachzeitschrift
(Review-Artikel)


Details zur Publikation

Autorinnen und Autoren: Wellmann P
Zeitschrift: Semiconductor Science and Technology
Verlag: Institute of Physics Publishing
Jahr der Veröffentlichung: 2018
Band: 33
Heftnummer: 10
Seitenbereich: 1-21
ISSN: 0268-1242
Sprache: Englisch


Abstract

have made SiC a unique semiconductor material for power electronic devices. Related to the outstanding physical properties of SiC, the preparation of this material is quite challenging. Processing is carried out at elevated temperatures that require special emphasis on the design of the growth machine and the applied construction materials. Growth inside a closed growth chamber demands the usage of advanced sensors and sophisticated computer simulation of the growth process. The application of advanced 2D and 3D in situ x-ray visualization techniques enables the visualization of the growth process. Reduction of the density of structural defects, a prerequisite for the technical application in power electronic devices, based on fundamental research and understanding of the crystallographic as well as the electronic properties of SiC beyond the knowledge base of standard semiconductor materials.


FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


Zitierweisen

APA:
Wellmann, P. (2018). Review of SiC crystal growth technology. Semiconductor Science and Technology, 33(10), 1-21. https://dx.doi.org/10.1088/1361-6641/aad831

MLA:
Wellmann, Peter. "Review of SiC crystal growth technology." Semiconductor Science and Technology 33.10 (2018): 1-21.

BibTeX: 

Zuletzt aktualisiert 2019-06-01 um 19:10