Superior Performance of V2O5 as Hole Selective Contact over other Transition Metal Oxides in Silicon Heterojunction Solar Cells

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Almora Rodriguez O, Gerling LG, Voz C, Alcubilla R, Puigdollers J, Garcia-Belmonte G
Zeitschrift: Solar Energy Materials and Solar Cells
Jahr der Veröffentlichung: 2017
Band: 168
Seitenbereich: 221-226
ISSN: 0927-0248


Abstract

Transition metal oxides (TMOs) have recently been proved to efficiently serve as hole-selective contacts in crystalline silicon (c-Si) heterojunction solar cells. In the present work, two TMO/c-Si heterojunctions are explored using MoO3 (reference) and V2O5 as to alternative candidate. It has been found that V2O5 devices present larger (16% improvement) power conversion efficiency mainly due to their higher open-circuit voltage. While V2O5 / c-Si devices with textured front surfaces also have short-circuit currents, it is also known that flat solar cell architectures allow for the V2O5/n-Si interface, giving significant carrier lifetimes of 200 μs (equivalent to a surface recombination velocity of Seff ~ 140 cm s-1) as derived from impedance analysis. As a consequence, a significant open-circuit voltage of 662 mV is achieved. It is found that, at the TMO/c-Si contact, a TMO work function enhancement ΔΦTMO occurs during the heterojunction formation with the consequent dipole layer enlargement Δ'= Δ + ΔΦTMO. TMO/c-Si contact energetics, carrier transport across the interface and surface TMO / c-Si heterojunctions.


FAU-Autoren / FAU-Herausgeber

Almora Rodriguez, Osbel
Lehrstuhl für Werkstoffwissenschaften (Materialien der Elektronik und der Energietechnologie)


Autor(en) der externen Einrichtung(en)
Polytechnic University of Catalonia / Universitat Politècnica de Catalunya
Universitat Jaume I (UJI)
Universitat Politècnica de Catalunya · BarcelonaTech (UPC)


Zitierweisen

APA:
Almora Rodriguez, O., Gerling, L.G., Voz, C., Alcubilla, R., Puigdollers, J., & Garcia-Belmonte, G. (2017). Superior Performance of V2O5 as Hole Selective Contact over other Transition Metal Oxides in Silicon Heterojunction Solar Cells. Solar Energy Materials and Solar Cells, 168, 221-226. https://dx.doi.org/10.1016/j.solmat.2017.04.042

MLA:
Almora Rodriguez, Osbel, et al. "Superior Performance of V2O5 as Hole Selective Contact over other Transition Metal Oxides in Silicon Heterojunction Solar Cells." Solar Energy Materials and Solar Cells 168 (2017): 221-226.

BibTeX: 

Zuletzt aktualisiert 2018-07-11 um 22:10