Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+ thin films prepared by radio frequency magnetron sputtering

Journal article
(Original article)


Publication Details

Author(s): Tucto Salinas KY, Flores Escalante LF, Guerra Torres JA, Grieseler R, Kups T, Pezoldt J, Osvet A, Batentschuk M, Weingärtner R
Journal: Materials Science Forum
Publisher: Trans Tech Publications Ltd
Publication year: 2017
Volume: 890
Pages range: 299-302
ISBN: 9783035710281
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract

Terbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures starting from 500 up to 1000°C using two annealing techniques were investigated: rapid thermal processing and quartz tube furnace. X-ray diffraction analysis revealed the formation of aluminum oxide and aluminum oxynitride phases at temperatures higher than 750°C. The oxygen content in the surface layer was measured with energy dispersive X-ray. The terbium emission was obtained after excitation either by photons or electrons. The films treated with rapid thermal processing at 750°C resulted in the highest emission


FAU Authors / FAU Editors

Batentschuk, Miroslaw PD Dr.-Ing.
Institute Materials for Electronics and Energy Technology (i-MEET)
Osvet, Andres Dr.
Institute Materials for Electronics and Energy Technology (i-MEET)


External institutions with authors

Pontificia Universidad Católica del Perú
Technische Universität Ilmenau


Research Fields

Neue Materialien und Prozesse
Research focus area of a faculty: Technische Fakultät


How to cite

APA:
Tucto Salinas, K.Y., Flores Escalante, L.F., Guerra Torres, J.A., Grieseler, R., Kups, T., Pezoldt, J.,... Weingärtner, R. (2017). Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+ thin films prepared by radio frequency magnetron sputtering. Materials Science Forum, 890, 299-302. https://dx.doi.org/10.4028/www.scientific.net/MSF.890.299

MLA:
Tucto Salinas, K. Y., et al. "Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb3+ thin films prepared by radio frequency magnetron sputtering." Materials Science Forum 890 (2017): 299-302.

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Last updated on 2019-26-04 at 00:08

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