A 60-GHz Integrated Radar Transmitter with Multiple Frequency Inputs and Digital Adjustable Gain in a 130-nm BiCMOS Technology

Völkel M, Schrotz AM, Weigel R, Hagelauer AM (2019)

Publication Language: English

Publication Status: Accepted

Publication Type: Conference contribution, Conference Contribution

Future Publication Type: Conference contribution

Publication year: 2019

Event location: Orlando, FL

DOI: 10.1109/rws.2019.8714496

Abstract

In this paper a 60 GHz monolithic transmitter for
high precision based industrial radar systems is presented. The
integrated transmitter has been designed using a 0.13μm SiGe
BiCMOS process from IHP (SG13G2) and includes multiplier,
multiplexer, power amplifier and a digital interface. For testing,
a PCB interface adapter is developed to control and supply the
chip directly on the wafer prober. The integrated transmitter
circuit has a size of 1800μm x 1600μm and a maximum power
consumption of 148.5mW from a 3.3V power supply. The circuit
provides four frequency inputs and multiplies them up to 60 GHz.
The chip delivers a output power of 8dBm at 60GHz and min.
5dBm over a frequency range from 55 to 65 GHz. The input
path is switched and the output power is adjustable by a digital
interface between -20 and 8dBm at 60 GHz. This serial interface
is realized in 0.13μm CMOS logic and consists of a 15 bit shift
register, decoder and and analog interface.

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How to cite

APA:

Völkel, M., Schrotz, A.-M., Weigel, R., & Hagelauer, A.M. (2019). A 60-GHz Integrated Radar Transmitter with Multiple Frequency Inputs and Digital Adjustable Gain in a 130-nm BiCMOS Technology. In Proceedings of the IEEE Radio and Wireless Symposium. Orlando, FL, US.

MLA:

Völkel, Matthias, et al. "A 60-GHz Integrated Radar Transmitter with Multiple Frequency Inputs and Digital Adjustable Gain in a 130-nm BiCMOS Technology." Proceedings of the IEEE Radio and Wireless Symposium, Orlando, FL 2019.

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