Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs

Journal article
(Letter)


Publication Details

Author(s): Rasinger F, Pobegen G, Aichinger T, Weber HB, Krieger M
Journal: Materials Science Forum
Publication year: 2018
Volume: 924
Pages range: 277-280
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


FAU Authors / FAU Editors

Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik


Research Fields

Semiconductors: Dopands and Defects (Dr. Krieger, Prof. Weber)
Lehrstuhl für Angewandte Physik


How to cite

APA:
Rasinger, F., Pobegen, G., Aichinger, T., Weber, H.B., & Krieger, M. (2018). Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs. Materials Science Forum, 924, 277-280. https://dx.doi.org/10.4028/MSF.924.277

MLA:
Rasinger, Fabian, et al. "Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs." Materials Science Forum 924 (2018): 277-280.

BibTeX: 

Last updated on 2019-24-02 at 07:58