Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs

Rasinger F, Pobegen G, Aichinger T, Weber HB, Krieger M (2018)

Publication Language: English

Publication Type: Journal article, Letter

Publication year: 2018

Journal

Materials Science Forum Trans Tech Publications

Book Volume: 924

Pages Range: 277-280

URI: https://www.scientific.net/MSF.924.277

DOI: 10.4028/MSF.924.277

Authors with CRIS profile

Heiko Weber Chair of Applied Physics Michael Krieger Chair of Applied Physics

How to cite

APA:

Rasinger, F., Pobegen, G., Aichinger, T., Weber, H.B., & Krieger, M. (2018). Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs. Materials Science Forum, 924, 277-280. https://dx.doi.org/10.4028/MSF.924.277

MLA:

Rasinger, Fabian, et al. "Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs." Materials Science Forum 924 (2018): 277-280.

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