Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing

Beitrag in einer Fachzeitschrift
(Letter)


Details zur Publikation

Autor(en): Rühl M, Ott C, Götzinger S, Krieger M, Weber HB
Zeitschrift: Applied Physics Letters
Jahr der Veröffentlichung: 2018
Band: 113
Seitenbereich: 122102
ISSN: 0003-6951
Sprache: Englisch


Abstract

We report on the generation and annihilation of color centers in 4H
silicon carbide (SiC) by proton irradiation and subsequent annealing.
Using low-temperature photoluminescence (PL), we study the
transformation of PL spectra for different proton doses and annealing
temperatures. Among well reported defect signatures, we observe
omnipresent but not yet identified PL signatures consisting of three
sharp and temperature stable lines (denoted TS1,2,3) at
768.8 nm, 812.0 nm, and 813.3 nm. These lines show a strong correlation
throughout all measurement parameters, suggesting that they belong to
the same microscopic defect. Further, a clear dependence of the TS1,2,3 line
intensities on the initial implantation dose is observed after
annealing, indicating that the underlying defect is related to
implantation induced intrinsic defects. The overall data suggest a
sequential defect transformation: proton irradiation initially generates
isolated silicon vacancies which are transformed into antisite vacancy
complexes which are, in turn, transformed into presumably
intrinsic-related defects, showing up as TS1,2,3 PL lines. We present recipes for the controlled generation of these color centers.


FAU-Autoren / FAU-Herausgeber

Götzinger, Stephan Prof. Dr.
Professur für Physik
Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik
Ott, Christian
Lehrstuhl für Angewandte Physik
Rühl, Maximilian
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik


Zitierweisen

APA:
Rühl, M., Ott, C., Götzinger, S., Krieger, M., & Weber, H.B. (2018). Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing. Applied Physics Letters, 113, 122102. https://dx.doi.org/10.1063/1.5045859

MLA:
Rühl, Maximilian, et al. "Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing." Applied Physics Letters 113 (2018): 122102.

BibTeX: 

Zuletzt aktualisiert 2019-24-02 um 07:57