Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique

Wellmann P, Schoenfeld W, Garcia J, Petroff P (1998)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 1998

Journal

Journal of Electronic Materials Springer Verlag (Germany) / Institute of Electrical and Electronics Engineers (IEEE)

Publisher: Minerals, Metals and Materials Society

Book Volume: 27

Pages Range: 1030-1033

Journal Issue: 9

DOI: 10.1007/s11664-998-0158-4

Abstract

We report the tunability of up to 150 meV of the ground state transition of selfassembled InAs quantum dots (QDs) using Mn ion implantation and subsequent annealing. Because of the exciton localization in the quantum dots, the photoluminescence efficiency (T = 12K) of the quantum dot transition remains at 80% of its original value after implantation with a Mn dose of 1 ´ 1013 cm–2 ions. Strong luminescence still remains at room temperature. At a high implantation dose (1 ´ 1015 cm–2) and rapid thermal annealing (700°C for 60s) about 25% of the QD luminescence intensity is recovered at T = 12K.

Authors with CRIS profile

Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

University of California US United States (USA) (US)

How to cite

APA:

Wellmann, P., Schoenfeld, W., Garcia, J., & Petroff, P. (1998). Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique. Journal of Electronic Materials, 27(9), 1030-1033. https://dx.doi.org/10.1007/s11664-998-0158-4

MLA:

Wellmann, Peter, et al. "Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique." Journal of Electronic Materials 27.9 (1998): 1030-1033.

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