Giant magnetoresistance in a low-temperature GaAs/MnAs nanoscale ferromagnet hybrid structure

Wellmann P, Garcia J, Feng JL, Petroff P (1998)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 1998

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 73

Pages Range: 3291-3293

Journal Issue: 22

DOI: 10.1063/1.122748

Abstract

We report the observation of a giant magnetoresistance effect in a low-temperature ~LT-!GaAs/MnAs nanoscale ferromagnet hybrid structure. The MnAs nanomagnets are formed by ion implantation of Mn into LT GaAs and subsequent annealing. We have studied the magnetotransport using a vertically biased p1-GaAs/LT-GaAs:MnAs/p1-GaAs structure. A negative magnetoresistance (Dr /r5@r (B)2r (0)#/r(0)) of up to 280% (B57 T) is observed at low temperatures (T,20 K), which changes its sign from negative to positive between T=15 K and T=20 K. The value of the positive magnetoresistance decreases with increasing temperature from 115% (20 K) to 1.4% (300 K). The magnetoresistance variations with B and T are correlated with the nanomagnet spacing in the structure.

Authors with CRIS profile

Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

University of California

United States (USA) (US)

How to cite

APA:

Wellmann, P., Garcia, J., Feng, J.-L., & Petroff, P. (1998). Giant magnetoresistance in a low-temperature GaAs/MnAs nanoscale ferromagnet hybrid structure. Applied Physics Letters, 73(22), 3291-3293. https://dx.doi.org/10.1063/1.122748

MLA:

Wellmann, Peter, et al. "Giant magnetoresistance in a low-temperature GaAs/MnAs nanoscale ferromagnet hybrid structure." Applied Physics Letters 73.22 (1998): 3291-3293.

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