Analysis on defect generation during the SiC bulk growth process
Hofmann HD, Schmitt E, Bickermann M, Kölbl M, Wellmann P, Winnacker A (1999)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 1999
Journal
Publisher: Elsevier BV
Book Volume: B61-62
Pages Range: 48-53
Event location: Montpellier
DOI: 10.1016/S0921-5107(98)00443-7
Abstract
SiC crystals (1.2–1.5%% diameter) were grown by the modified Lely technique on seeds with different micropipe densities in order to study the defect generation during seeding and subsequent bulk growth. The micropipe generation is found to be strongly correlated with the occurrence of second phases in SiC like carbon inclusion formation. Model approaches for stable SiC growth conditions, i.e. without inclusions, are discussed. Numerical modeling was performed to reveal the radial and axial temperature gradients of our crucible set-up. Stress formation and micropipe generation are determined to be enhanced in the presence of a large axial temperature gradient.
Authors with CRIS profile
Matthias Bickermann
Technische Fakultät
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Albrecht Winnacker
Technische Fakultät
Involved external institutions
Germany (DE)How to cite
APA:
Hofmann, H.-D., Schmitt, E., Bickermann, M., Kölbl, M., Wellmann, P., & Winnacker, A. (1999). Analysis on defect generation during the SiC bulk growth process. Materials Science and Engineering B-Advanced Functional Solid-State Materials, B61-62, 48-53. https://dx.doi.org/10.1016/S0921-5107(98)00443-7
MLA:
Hofmann, Heinz-Dieter, et al. "Analysis on defect generation during the SiC bulk growth process." Materials Science and Engineering B-Advanced Functional Solid-State Materials B61-62 (1999): 48-53.
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