Single molecular precursor ink for AgBiS2 thin films: synthesis and characterization

Journal article
(Original article)


Publication Details

Author(s): Gu E, Lin X, Tang X, Matt G, Osvet A, Hou Y, Jäger S, Xie C, Karl A, Hock R, Brabec C
Journal: Journal of Materials Chemistry C
Publisher: ROYAL SOC CHEMISTRY
Publication year: 2018
Volume: 6
Journal issue: 28
Pages range: 7642-7651
ISSN: 2050-7526
eISSN: 2050-7534
Language: English


Abstract

Recently, AgBiS2 has been demonstrated to be a promising non-toxic, earth-abundant absorber material for solar energy application. In this work, a novel route to deposit AgBiS2 thin films from single molecular precursor ink is presented. It is found that the amount of thiourea has a crucial impact on the formulation of a stable molecular ink. Understanding the coordination chemistry of the molecular precursor ink is important for getting better control over the thin film processing. With the assistance of Raman spectroscopy, possible complexation mechanisms and general coordination states within the molecular ink are studied. In addition, the influence of ink composition as well as the annealing temperature on the structure and morphology of resulting AgBiS2 films is systematically investigated. It is found that the crystallinity and particle size increase with higher annealing temperature. The obtained AgBiS2 thin films show a cubic structure with a preferred orientation in [111] direction. Optical and electrical measurements demonstrate that the obtained AgBiS2 is an indirect band gap material, which features two transition mechanisms with an indirect band gap of around 0.87 eV and a direct one of around 1.21 eV. The high absorption coefficient, low Urbach energy and fast transient photoconductivity confirm its potential as an absorber for photovoltaic applications.


FAU Authors / FAU Editors

Brabec, Christoph Prof. Dr.
Institute Materials for Electronics and Energy Technology (i-MEET)
Gu, Ening
Institute Materials for Electronics and Energy Technology (i-MEET)
Hock, Rainer Prof. Dr.
Professur für Kristallographie und Strukturphysik
Hou, Yi
Institute Materials for Electronics and Energy Technology (i-MEET)
Karl, André
Institute Materials for Electronics and Energy Technology (i-MEET)
Lin, Xianzhong
Institute Materials for Electronics and Energy Technology (i-MEET)
Matt, Gebhard Dr.
Institute Materials for Electronics and Energy Technology (i-MEET)
Osvet, Andres Dr.
Institute Materials for Electronics and Energy Technology (i-MEET)
Tang, Xiaofeng
Institute Materials for Electronics and Energy Technology (i-MEET)
Xie, Chen
Institute Materials for Electronics and Energy Technology (i-MEET)


External institutions with authors

Bayerisches Zentrum für Angewandte Energieforschung e.V. (ZAE Bayern)


Research Fields

Neue Materialien und Prozesse
Research focus area of a faculty: Technische Fakultät


How to cite

APA:
Gu, E., Lin, X., Tang, X., Matt, G., Osvet, A., Hou, Y.,... Brabec, C. (2018). Single molecular precursor ink for AgBiS2 thin films: synthesis and characterization. Journal of Materials Chemistry C, 6(28), 7642-7651. https://dx.doi.org/10.1039/c8tc01195h

MLA:
Gu, Ening, et al. "Single molecular precursor ink for AgBiS2 thin films: synthesis and characterization." Journal of Materials Chemistry C 6.28 (2018): 7642-7651.

BibTeX: 

Last updated on 2019-09-09 at 15:34