Electronic Transport Properties of 1D-Defects in Graphene and Other 2D-Systems

Beitrag in einer Fachzeitschrift
(Review-Artikel)


Details zur Publikation

Autor(en): Willke P, Schneider MA, Wenderoth M
Zeitschrift: Annalen Der Physik
Verlag: WILEY-V C H VERLAG GMBH
Jahr der Veröffentlichung: 2017
Band: 529
Heftnummer: 11
ISSN: 0003-3804


Abstract

The continuous progress in device miniaturization demands a thorough understanding of the electron transport processes involved. The influence of defects - discontinuities in the perfect and translational invariant crystal lattice - plays a crucial role here. For graphene in particular, they limit the carrier mobility often demanded for applications by contributing additional sources of scattering to the sample. Due to its two-dimensional nature graphene serves as an ideal system to study electron transport in the presence of defects, because one-dimensional defects like steps, grain boundaries and interfaces are easy to characterize and have profound effects on the transport properties. While their contribution to the resistance of a sample can be extracted by carefully conducted transport experiments, scanning probe methods are excellent tools to study the influence of defects locally. In this letter, the authors review the results of scattering at local defects in graphene and other 2D systems by scanning tunneling potentiometry, 4-point-probe microscopy, Kelvin probe force microscopy and conventional transport measurements. Besides the comparison of the different defect resistances important for device fabrication, the underlying scattering mechanisms are discussed giving insight into the general physics of electron scattering at defects.


FAU-Autoren / FAU-Herausgeber

Schneider, M. Alexander Prof. Dr.
Professur für Experimentalphysik


Autor(en) der externen Einrichtung(en)
Georg-August-Universität Göttingen


Zitierweisen

APA:
Willke, P., Schneider, M.A., & Wenderoth, M. (2017). Electronic Transport Properties of 1D-Defects in Graphene and Other 2D-Systems. Annalen Der Physik, 529(11). https://dx.doi.org/10.1002/andp.201700003

MLA:
Willke, P., M. Alexander Schneider, and M. Wenderoth. "Electronic Transport Properties of 1D-Defects in Graphene and Other 2D-Systems." Annalen Der Physik 529.11 (2017).

BibTeX: 

Zuletzt aktualisiert 2018-22-08 um 16:23