SiC epitaxial structure growth: evaluation and modeling

Nishizawa SI, Wellmann P, Pons M (2006)

Publication Language: English

Publication Type: Book chapter / Article in edited volumes

Publication year: 2006

Publisher: Transworld Research Network

Edited Volumes: Wide Band Gap Materials and New Developments

City/Town: India

Pages Range: 69-89

Authors with CRIS profile

Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

Institut National Polytechnique de Grenoble - Grenoble Institute of Technology FR France (FR) Kyushu University / 九州大学 JP Japan (JP)

How to cite

APA:

Nishizawa, S.-I., Wellmann, P., & Pons, M. (2006). SiC epitaxial structure growth: evaluation and modeling. In M. Syväjärvi and R. Yakimova (Eds.), Wide Band Gap Materials and New Developments. (pp. 69-89). India: Transworld Research Network.

MLA:

Nishizawa, Shin-Ichi, Peter Wellmann, and Michel Pons. "SiC epitaxial structure growth: evaluation and modeling." Wide Band Gap Materials and New Developments. Ed. M. Syväjärvi and R. Yakimova, India: Transworld Research Network, 2006. 69-89.

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