Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method

Journal article
(Original article)


Publication Details

Author(s): Contreras S, Zielinski M, Konczewicz L, Blanc C, Juillaguet S, Müller R, Künecke U, Wellmann P, Camassel J
Journal: Materials Science Forum
Publication year: 2006
Volume: 527-529
Pages range: 633-636
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract

We report on investigation of p-type doped, SiC wafers grown by the Modified-Physical Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 10(18) to 10(20) cm(-3), with weak Ti concentration but large N compensation. To measure the wafers' resistivity, carrier concentration and mobility, temperature-dependant Hall effect measurements have been made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS. Additional LTPL measurements show no evidence of additional impurities in the range of investigation, but suggest that the additional compensation may come from an increased concentration of non-radiative centers.


FAU Authors / FAU Editors

Künecke, Ulrike Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


External institutions with authors

University of Montpellier / Université Montpellier


How to cite

APA:
Contreras, S., Zielinski, M., Konczewicz, L., Blanc, C., Juillaguet, S., Müller, R.,... Camassel, J. (2006). Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method. Materials Science Forum, 527-529, 633-636. https://dx.doi.org/10.4028/www.scientific.net/MSF.527-529.633

MLA:
Contreras, Sylvie, et al. "Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method." Materials Science Forum 527-529 (2006): 633-636.

BibTeX: 

Last updated on 2018-15-08 at 11:10