Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules

Journal article
(Original article)


Publication Details

Author(s): Arzig M, Salamon M, Uhlmann N, Johansen BA, Wellmann P
Journal: Materials Science Forum
Publisher: Trans Tech Publications Ltd
Publication year: 2018
Volume: 924
Pages range: 245-248
ISBN: 9783035711455
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract

Two 3inch SiC boules were grown in a PVT setup using source material of different packing density. During the growth, in-situ computed tomography of the growing boules showed differences in the development of the growth interface. A slightly bent growth interface was found for the smaller packing density. For the higher packing density the resulting crystal exhibits the onset of 6 pyramidal facets on its flanks. Besides that, strong anisotropic lateral growth was found on its (000-1) facet. Numerical simulations show an impact of the powder on the thermal gradient in the growth cell and therefore on the supersaturation. It is discussed that a higher supersaturation can account for the anisotropy in the growth rate of the [1-100] and the [11-20] direction.


FAU Authors / FAU Editors

Arzig, Matthias
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


External institutions with authors

Fraunhofer Development Center X-ray Technology (EZRT)


How to cite

APA:
Arzig, M., Salamon, M., Uhlmann, N., Johansen, B.A., & Wellmann, P. (2018). Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules. Materials Science Forum, 924, 245-248. https://dx.doi.org/10.4028/www.scientific.net/MSF.924.245

MLA:
Arzig, Matthias, et al. "Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules." Materials Science Forum 924 (2018): 245-248.

BibTeX: 

Last updated on 2019-05-01 at 03:10